Towards ultarlow-power and scalable nanodevices using quantum materials
October 27, 2022
Location: HEC-356 at 11am.
The current electronics industry is facing challenges both from the fundamental physics limit of silicon on the small scale, and the new demand for big-data applications on the large scale. Spintronics, utilizing spin degree of freedom, is a promising candidate for future beyond-CMOS devices and systems, thanks to their low power consumption, nonvolatility, and easy 3D integration. The emerging 2D magnets can preserve magnetism even in monolayer (under 1 nm) limits, and thus they are promising to further scale down devices. They have a sharp interface and atomically thin nature, and designer quantum heterostructures and more functionalities (e.g. stacking order, twist angle, thickness, and electric gating) can be achieved.In this talk, I will discuss 2D spintronics on skyrmions, and their potential applications. With a stacking order degree of freedom, I will present observations of real-space topological spin textures – magnetic skyrmions, in 2D ferromagnet/transition metal dichalcogenide heterostructures. This is the first direct observation of skyrmion lattice in 2D layered magnets. By further extending the heterostructure to a 2D ferromagnet/2D ferromagnet system, I will present the vertical imprinting of skyrmions to neighboring layers, adding new functionality to skyrmion-based spintronics. I will also discuss future directions, including energy-efficient control in skyrmions and unconventional computing with spintronics.
Yingying Wu is currently a postdoctoral associate at Massachusetts Institute of Technology and a postdoctoral fellow in CIQM at Harvard University. She obtained her Ph.D. in Electrical and Computer Engineering at the University of California, Los Angeles in 2020. Before that, she received a master degree in physics from the Hong Kong University of Science and Technology and a bachelor degree in Physics from Nanjing University. Her research focuses on emerging quantum materials and devices for high-performance memories and unconventional computing.